| 摘要 |
<p>The static RAM (SRAM) has a bit line pull-up circuit (24) which is so constituted that a voltage difference between the reference voltages (Vref1 and Vref2) that do not change depending upon the temperature is reflected on the voltage amplitude to the bit lines (BL, BL) during the reading operation. The SRAM which is constituted by using Schottky gate FETs and is immune to variations in the process parameters or a change in temperature, and does not permit the voltage amplitude of the bit lines (36) to be changed by variations in the process parameters or by a change in temperature. <IMAGE></p> |
