VLSI integration into a 3-D WSI dual composite module
摘要
The difficulty with integrating packaged devices into a dual composite module design for wafer scale devices is the height difference between the WSI and packaged devices a typical wafer scale device is 0.025 (in) high while typical packaged VLSI components are 0.080 (in) or more. This leaves little room for the other 5 layers of interconnect boards and PCI layers required for the dual composite module. The solution is that the PWB on the side of the composite heat sink has been shortened to support only the wafer scale device on the heat sink. This eliminated PWB thickness and PCI interfaces from the side with the VLSI components. Also 3-P connectors are made with a pressure contact interconnecting (PCI) board.
申请公布号
US5229917(A)
申请公布日期
1993.07.20
申请号
US19920920623
申请日期
1992.07.24
申请人
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE
发明人
HARRIS, DAVID B.;KARR, SCOTT P.;REINHART, STEPHEN J.