| 摘要 |
PURPOSE:To obtain a highly reliable semiconductor device having an excellent high-frequency characteristic and heat radiating property. CONSTITUTION:The title semiconductor device has a semiconductor element chip 4 one main surface of which is firmly attached to heat radiating bodies 1 and 2, an insulator 7 having a hollow section which Surrounds the chip 4 and one end face of which is in contact with the heat radiating bodies 1 and 2, with the other end face being separated from the heat radiating body 1 by a prescribed distance beyond the other main surface of the chip 4, metallic foil 8 connecting the other end face of the insulator 7 to the other main surface of the chip 4, and lid 6 which is fitted to the other end face of the insulator 7 in a state where the lid 6 forms an alloy with the foil 8. The above-mentioned prescribed distance from the other end face of the hollow section to the heat radiating body 1 is set 3-10 times as long as the thickness of the metallic foil 8. |
