CONTROL OF ANISOTROPIC ETCHING OF SILICON USING ETCHING AGENT, TO WHICH SELECTED CATALYST IS ADDED

摘要

PURPOSE: To realize an improved method of anisotropically etching the (100) crystalline face of a silicon wafer. CONSTITUTION: A wafer is dipped into an etching solution, which comprises an aromatic compound possessed of one polar functional group and two adjacent hydroxyl groups on a ring, amine, water, and substituted 1,4-diazine. The etching solution is capable of effectively etching silicon at an etching rate higher than 100μm/hour or so. Furthermore, the etching solution is capable of carrying out etching which is high in quality and uniformity, at an etching rate higher than 150μm or so.