发明名称 AU BONDING WIRE FOR SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To thoroughly lover occurrence of exfoliation at point A in high temperature standing test by adding specific quantity of one or more than one kinds of Cu, Zn, W, Re or Pt element to a high purity Au thereby suppressing diffusion of metal in the base metal layer of chip electrode with respect to a ball at the time of thermocomprassion. CONSTITUTION:200-40000 atomic ppm of one or more than one kinds of Cu, Zn, W, Re, Pt elements are added to a high purity Au. Satisfactory characteristics can not be achieved if the content of Cu, Zn, W, Re and Pt elements is lower than 200 atomic ppm. When the content exceeds 4000 atomic ppm, bonding strength at point A lowers and occurrence of exfoliation at point A increases. When the content increases furthermore, a ball becomes too hard at the time of formation to cause cracking at the time of ball bonding thus increasing failure rate. Consequently, the content of additive element is set in the range of 200-40000 atomic ppm.
申请公布号 JPH05160184(A) 申请公布日期 1993.06.25
申请号 JP19910324713 申请日期 1991.12.09
申请人 TANAKA DENSHI KOGYO KK 发明人 IGA SUKEHITO;NAGAMATSU ICHIRO
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址