LARGE-POWER SEMICONDUCTOR DEVICE

摘要

A high-power semiconductor device comprises a overcurrent detecting terminal (T). One of conductive layers selectively adhered to a substrate (18) of the semiconductor device is thinner than the other conductive layers. One of terminals for an electrode of the semiconductor element (23) of the high-power semiconductor device is connected to one end of the thinner conductive layer (22). The overcurrent detecting terminal (T) is electrically connected to said electrode, and to the other end of the thinner conductive layer (22). A potential difference between the terminal and the overcurrent detecting terminal is measured, thereby detecting a current, to prevent an overcurrent from flowing through the semiconductor element.