| 摘要 |
PURPOSE:To manufacture a semiconductor memory having a high density and high performance by reducing an area of each memory cell and to shorten a word line. CONSTITUTION:After a gate electrode 5, i.e., a word line connected by a coupler 5a on an active region 2 is formed, an opening 13 passing through the electrode 5 is formed, and simultaneously the coupler 5a is removed, and the electrodes 5 are divided. Impurity ions are implanted through the opening 13 to form a diffused layer 16, and a sidewall made of an insulating film 17 is formed inside the opening 13, thereby forming a contact hole 13a of a bit line. Thus, the electrode 5 and the hole 13 are formed in a self-alignment manner. It is not necessary to predict a designing margin therebetween, and there is no necessity of extending by avoiding the hole 13a in the amount corresponding to the margin of the electrode 5. |
