High performance 1T-DRAM cell device and manufacturing method thereof,申请号KR20070086516-传众专利搜索

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发明名称	High performance 1T-DRAM cell device and manufacturing method thereof
摘要
申请公布号	KR100894683(B1)	申请公布日期	2009.04.24
申请号	KR20070086516	申请日期	2007.08.28
申请人		发明人
分类号	H01L29/78;H01L21/336	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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