| 摘要 |
PURPOSE:To increase a photosignal output and to reduce a reference voltage of a black level by forming at a ray receiving section a recessed portion having a surface which is lower than the surface of a transfer device. CONSTITUTION:A ray receiving section is formed in a recessed shape. Consequently, as carriers 13 and 14 are formed at the deep portion of a semiconductor substrate 6 by an incident ray 12, the carrier 14 is to be transferred a long distance in order to reach a depletion layer 9. Therefore, the trapping probability during the transfer by the trapping center is increased, thereby reducing the volume of the carrier 14 coming into the depletion layer 9. On the other hand, as a depletion layer 8 of the ray receiving section is expanding toward the inner part, the distance between the formation point of the carrier and the depletion layer 8 does not differ from that of the conventional product, thereby allowing to increase the photosignal output. |
