Semiconductor memory device

摘要

A semiconductor memory device according to an embodiment described below comprises: first lines arranged in a first direction perpendicular to a main surface of a substrate and extending in a second direction crossing the first direction; second lines arranged in the second direction, extending in the first direction, and intersecting the first lines; memory cells disposed at intersections of the first lines and the second lines; and an interlayer insulating film provided between the second lines. The interlayer insulating film has an air gap extending continuously in the first direction so as to intersect at least some of the first lines aligned along the first direction. The interlayer insulating film also includes an insulating film positioned above the air gap and having a curved surface that protrudes toward a direction of the substrate.

主权项

1. A semiconductor memory device, comprising:
first lines arranged in a first direction crossing a main surface of a substrate and extending in a second direction crossing the first direction; second lines arranged in the second direction, extending in the first direction, and intersecting the first lines; memory cells disposed at intersections of the first lines and the second lines; and an interlayer insulating film provided between the second lines arranged in the second direction, the interlayer insulating film having therein an air gap extending continuously in the first direction so as to intersect at least some of the first lines aligned along the first direction, and an insulating film positioned above the air gap and having a curved surface that protrudes toward a direction of the substrate, the air gap being positioned between the second lines arranged in the second direction.