| 摘要 |
A planarization method includes the steps of forming a second layer (4) on a first layer (1) which has an alignment mark (3B) having a heat sink structure, where the second layer is made of a metal, and irradiating a pulse energy beam on the entire exposed surface of the second layer (4) to planarize the second layer. The heat generated in the second layer (4) on the alignment mark (3B) is released via the first layer (1) so that substantially no melting of the second layer occurs on the alignment mark. <IMAGE> |
