| 摘要 |
PURPOSE:To prevent the static breakdown of a semiconductor integrated circuit device by inserting a high speed diode having the prescribed internal resistance value between one base connecting point of a pair of transistors forming an ECL and a power source of emitter or collector side. CONSTITUTION:A diode is inserted in a circuit 3 having transistors(TR)Q1-Q3, resistors RB, RE, RC1, RC2 and RP and connected to an input terminal 1 to protect the circuit 3. A diode D11 is, for example, inserted between an emitter side power source VEE and the input terminal 1, and is formed with reverse breakdown voltage equivalent or higher than the withstand of the TRQ1. For example, the emitter 72 of the transistor is shortcircuited with the base 69, and the base and collector junction is used as a diode D11. In this manner, the static breakdown of the TRQ1 and the resistor RB can be prevented, and of the diode itself can be prevented. |
