| 摘要 |
PURPOSE:To realize a nonvolatile storage device, which can be more simplified the constitution of the device and in whose constitution a more reduction in the area of a chip is contrived. CONSTITUTION:A sense amplifier 30 is connected to each terminal of two bit lines BL and inverse BL connected respectively with a plurality of memory cells 3, which are respectively constituted of a capacitor 1 formed using a ferro- electric film and a MOS transistor 2. Dummy cells 5 which are respectively constituted of a dummy capacitor 4 formed of a normal dielectric film are connected to the bit lines BL and inverse BL one by one. The lines BL and inverse BL are precharged at prescribed levels prior to readout of data, polarization charges are read out from the cells 3 into the bit line BL on one side in this state. A voltage level of the line inverse BL is boosted utilizing a storage charge in the capacitor 4 connected to the line BL, and the bit line BL subsequent to the boosting and the precharge level are maintained intact. The difference between the voltage level of the line BL and a voltage level of the other bit line BL is amplified and detected by the amplifier 30 to read out data. |
