AETZVERFAHREN ZUM ERZEUGEN VON LOCHOEFFNUNGEN ODER GRAEBEN IN N-DOTIERTEM SILIZIUM.

摘要

The etching process for obtaining apertures or recesses in a doped silicon substrate (1) or layer, uses an electrolysis cell contg. an acid soln. (3) with the silicon acting as the positive electrode (5). Pref. the silicon disc (6) has an applied silicon nitride etching mask and is supported in a Teflon (RTM) holder (2) sealed in contact with the acid soln. (3). The silicon disc (6) is coupled to the positive pole (5) of the voltage source via an ohmic contact (4), the negative electrode (6) supported at a given distance from the silicon disc (6) within the acid soln. (3). The required current density is obtd. by illuminating the rear surface of the silicon disc (6) with light of a given intensity.