| 摘要 |
PCT No. PCT/JP89/01174 Sec. 371 Date Jul. 17, 1990 Sec. 102(e) Date Jul. 17, 1990 PCT Filed Nov. 17, 1989 PCT Pub. No. WO90/05994 PCT Pub. Date May 31, 1990.The present invention relates to a dry etching method in which the type of reactive gas used is improved and the selectively between a workpiece being etched and a substance below the workpiece is increased. A gas comprising a fluoride gas and a compound gas containing hydrogen as a constituent element is used as the reactive gas. According to the present invention, the etching selectivity between a workpiece being etched and a substance below the workpiece is greatly increased, and etching of the substance below the workpiece can be prevented. The present invention is applicable to a semiconductor structure having a silicon oxide film below a silicon nitride film.
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