A single crystal growing apparatus.

摘要

A single crystal growing apparatus (1) is described for growing a single crystal ingot from a molten semiconductor material in a crucible assembly (5) consisting of at least two crucibles in the form of an outer crucible (11) and an inner crucible (12). The invention particularly relates to a single crystal growing apparatus comprising a transparent highly durable inner crucible (12) to provide a high efficiency of mono-crystallization of the crystal ingot in the process of single crystal growing. The inner crucible (12) is characterized in that (i) it contains a limited amount of air bubbles, i.e., 0,05% or less of the total volume of the crucible; (ii) a light transmissivity of the inner crucible (12) which is not less than 70% of the total under a light of 240 nm wave length or more; and (iii) a mean diameter of the air bubbles contained in the inner crucible (12) which is limited to 40 mu m or less.