| 摘要 |
PURPOSE: A method of forming a contact plug in a semiconductor device is provided to increase the performance of a semiconductor element by suppressing a bridge defect maximum. CONSTITUTION: In a device, a first insulating layer(106) including a contact plug(114) is formed on a semiconductor substrate(102). The top of the contact plug is exposed to the outside by etching the top of the first insulating layer. A second insulating layer(118) is formed on the surface of the contact plug which is exposed to the outside. A third dielectric polish layer(120) is formed on the first insulating layer and the second insulating layer. A contact plug is exposed to the outside by removing the second insulating layer formed on the third insulating layer. A second etch stop layer(122) is formed on the contact plug and the third dielectric layer. A fourth insulating layer(124) is formed on the second etch stop layer. A metal wiring(126) is formed by forming the conducting material on the trench of the fourth insulating layer.
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