| 摘要 |
PURPOSE:To manufacture a CuInSe photoelectric transfer element, which has improved photoelectromotive force, safely and economically. CONSTITUTION:A p-type CuInSe2 film 0.5mum thick is formed on a glass board provided with an Mo sputter film 0.1mum thick by vapor selenide method, and then the surface of the CuInSe2 film is removed 200Angstrom (angstrom) by etching in the aqueous solution of 0.05mol./l in Br2 concentration and 150g/l in KBr concentration, and then it is washed in pure water, and dried, and then nondope CdS is deposited 2,000Angstrom and In dope CdS 8,000Angstrom in order to manufacture a photoelectric transfer element. |
