| 摘要 |
PURPOSE:To obtain a nonreducing dielectric material porcelain composition burnable even under a low oxygen particle pressure without converting texture into a semiconductor, satisfying >=3,000 dielectric constant, >=1.0 log IR insulation resistance at room temperature, >=10.0 long IR insulation resistance at 125 deg.C temperature characteristics of dielectric constant in a range of + or -15 % in a wide region of -55 deg.C to 125 deg.C with a capacity value at 25 deg.C as a standard. CONSTITUTION:A nonreducing dielectric material porcelain composition comprising 100mol% main components composed of BaTiO3 having <=0.04wt.% alkali metal oxide content as impurities, one or more rare earth metal oxides (Re2O3) of Tb2O3, Dy2O3, Ho2O3 and Er2O3 and Co2O3 in a blending ratio Co2O3-99.4mol% BaTiO3 0.3-4.0 mol% Re2O3 and 0.3-4.0mol% Co2O3 and a subsidiary component composed of 0.2-4.0mol% Bad, 0.2-3.0mol% MnO, 0.5-5.0mol% MgO and 0.3-3.0mol% NiO or Al2O3. |
