发明名称 |
Semiconductor device and process for producing same |
摘要 |
A semiconductor device provided with a polycrystalline silicon resistor containing an impurity in a high concentration and having a resistance adjusted by a current conduction therethrough at a current density of a threshold value or more, which comprises: a polycrystalline silicon resistor containing a first impurity having a negative value of a temperature coefficient of resistance in a high impurity concentration region of said polycrystalline silicon resistor and a second impurity having a positive value of a temperature coefficient of resistance in a high impurity concentration region of the polycrystalline silicon resistor. A process for producing same is also disclosed.
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申请公布号 |
US5187559(A) |
申请公布日期 |
1993.02.16 |
申请号 |
US19910661240 |
申请日期 |
1991.02.27 |
申请人 |
NIPPONDENSO CO., LTD. |
发明人 |
ISOBE, YOSHIHIKO;IIDA, MAKIO |
分类号 |
H01L27/04;H01L21/02;H01L21/822;H01L27/06 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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