| 摘要 |
PURPOSE:To improve stability of a memory cell by reducing a parasitic resistance in the side of source of a drive transistor of a MOS static memory cell and improving capability of the drive transistor. CONSTITUTION:In the process of forming an LDD transistor, an ordinary impurity region 107D and an impurity region 108 which extends widely in the channel length direction of the transistor can be obtained by introducing high concentration impurity after removing a space of both side surfaces of gate only from the single side by etching the region (a) of the figure. This diffused layer is used as the source of a drive transistor to form a static memory cell. |
