| 摘要 |
PURPOSE:To obtain the patterning method for an org. high-polymer film, such as photo-resist, which can form patterns exactly separating recessed parts and other regions on the org. high-polymer film formed on a semiconductor substrate having the recessed parts. CONSTITUTION:The 1st region 11a of a CEL material 11 formed on the recessed parts of the semiconductor substrate 1 is formed to the film thickness sufficiently larger than the film thickness of the 2nd region 11b exclusive thereof. Only the 2nd region having the smaller film thickness is irradiated with light 4 from above the semiconductor substrate 1 for a prescribed period of time and is thereby provided with light transmittability. Only the photoresist 2 under the 2nd region 11b is exposed by photoirradiation and thereafter, the semiconductor substrate 1 is immersed into a suitable solvent to remove only the photoresist existing under the 1st region 11a and to allow the photoresist under the 2nd region 11b to remain. The photoresist 2 is patterned to exactly reflect the recessed part shape of the semiconductor substrate 1. |
