| 摘要 |
PURPOSE:To allow the formation of fine patterns on an org. insulating layer by allowing the formation of the fine patterns on the org. insulating layer with a simple stage and eliminating the need for dangerous chemicals and waste liquid treating facilities. CONSTITUTION:A photoresist film 3 is formed on the insulating layer 2 consisting of org. matter having a high insulating characteristic and is exposed and developed with the desired patterns, by which the unnecessary parts of the insulating layer 2 are exposed. The insulating layer 2 is evaporated by the irradiation with an excimer laser 4 and is patterned; thereafter, the photoresist film 3 is removed. |
