| 摘要 |
PURPOSE:To increase the Seebeck coefficient and electric conductivity of a thermoelectric material by a method wherein a process for forming a thin film containing hydrogen or oxygen in addition to Si on a substrate in a vacuum vessel and a process for making metal or metal-silicon alloy superfine particles adhere on the substrate surface formed with the thin film are simultaneously or alternately performed. CONSTITUTION:An SiO film 13 is subjected to clustering utilizing an overcooling due to an adiabatic expansion which is caused by a pressure difference in a vacuum vessel 7. Thermoions are cast on the cluster and the cluster is ionized and is turned into an ion cluster beam. At that time, Ar gas is simultaneously introduced in a vacuum vessel 8 through an inert gas introducing port 20. A tungsten board 22 is heated in an atmosphere of the Ar gas and Fe grains 23 are dissolved and evaporated. Thereby, it becomes possible to make a thermoelectric material of a structure, wherein fine particles of a mean diameter of 40 to 4000Angstrom are dispersed in an Si-O amorphous film which is an amorphous film having a preferential Si-oxygen bond. |
