| 摘要 |
The production of integrated circuits is described. To achieve a very narrow antiglare system, a simple method is provided which uses the silicon nitride lifting (bird's beak) which occurs during a local thick oxidation step. Specifically, a local oxidation step is performed and the resulting oxide is completely removed. The edges (20, 22) of the nitride film (14) are left in an overhanging position. A matching polysilicon deposit allows silicon to be deposited uniformly even under said edges. Lastly, vertical anisotropic etching removes all the silicon except from under the overhanging edges, to leave two lines of silicon (28, 30). Ion implantation (34) may be performed therebetween.
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