| 摘要 |
PURPOSE:To decrease defects and improve electric property by providing a middle layer of a doped diamond single crystal film, which is different in conductivity type from another doped diamond single crystal film, on this single crystal film, and providing a doped diamond single crystal film, which is different in conductivity type from this middle layer on the middle layer. CONSTITUTION:A middle layer 3 is made on the doped epitaxial diamond layer 2 made on a substrate 1, and further thereon a doped epitaxial diamond layer 4 is made. What is more, the epitaxial layer 2 contains defects, which are caused by the interface between the substrate 1 and the epitaxial layer 2, or defects, which occur at the early stage of the growth or at unstable growth period, and these defects are not lightened during the growth of the epitaxial layer 2. Therefore, a middle layer 3 being a dope layer, which is different in conductivity type from the epitaxial layer 2, or a doped layer is provided. Hereby, semiconductor diamonds can be gotten, which are excellent in electric property and can be made use of as various kinds of elements. |
