| 摘要 |
<p>PURPOSE:To obtain a high efficiency heat sink with low costs by a method wherein Cu plating is performed onto every part of upper, lower and end surfaces of a material selected from metals of Mo, W or an alloy thereof and an Fe-Ni alloy. CONSTITUTION:In a semiconductor device to which a power element is mounted through a heat sink, a heat sink material comprises one selected from metals of Mo, W or an alloy thereof and an Fe-Ni alloy. Namely, the heat sink material comprises a matter having the coefficient of linear expansion 3 to 7X10<-6>/K. A Cu plating having a thickness of at least 50mum or more is performed on the surface of the heat sink material and on every part of upper, lower, and end surfaces. Thus, the high efficiency heat sink is obtained with low costs, and further if a low-heat expansion material using as the heat sink material and a thickness in the Cu plating are appropriately selected, the heat sink making the most of both characteristics is obtained.</p> |
