| 摘要 |
PURPOSE:To obtain the phase shift mask having high accuracy by forming a shifter layer, a Ta thin-film layer and an electron beam resist layer on a substrate formed with light shielding patterns, plotting the patterns while taking conduction with the Ta thin-film layer. CONSTITUTION:After the light shielding patterns 6 are formed on a substrate 2, the shifter layer 8 of the thickness to attain 180 deg. phase difference of projected light is provided on the light shielding patterns 6. The film of the Ta is formed to a prescribed thickness by a sputtering method to form the Ta thin-film layer 10 and an electron beam resist is applied thereon and is subjected to a baking treatment, by which the electron beam resist layer 12 is formed. While the conduction is taken by the Ta thin-film layer 10, the patterns are plotted by using an electron beam plotting device. Namely, the patterns are plotted while the conduction is taken by the Ta thin-film layer which is a conductor and, therefore, there is no charge up and the normal patterns can be plotted without having the inter-mixing of the Ta thin-film layer 10 with the electron beam resist layer 12. |
