发明名称 |
SEMICONDUCTOR DEVICE HAVING INTERCONNECTION LAYER CONTACTING SOURCE/DRAIN REGIONS |
摘要 |
A semiconductor device incloudes a MOS type field effect transistor whose gate electrode (4) has its surface covered with a first insulating film (5) and left and right sides provided with a pair of second insulating films (10). A first conductive layer (12, 13) is formed on the surface of the source/drain region (8, 11) and the surface of one of a pair of second insulating films (10) which are positioned on one side of the gate electrode (4). A third insulating film (24b) is formed at least on the surface of the second insulating film (10) on which the first conductive layer (12, 13) is not formed. A second conductive layer (18) is provided on the surface of the third insulating film (24b) and on the source/drain region (8, 11) on which the third insulating film (24b) is formed. This structure enables provision of a semiconductor device in which a contact hole can be formed in self-alignment, independent from the influence of errors in the step of patterning a resist mask.
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申请公布号 |
US5173752(A) |
申请公布日期 |
1992.12.22 |
申请号 |
US19910690824 |
申请日期 |
1991.04.26 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
MOTONAMI, KAORU;AJIKA, NATSUO;HACHISUKA, ATSUSHI;OKUMURA, YOSHINORI;MATSUI, YASUSHI |
分类号 |
H01L27/10;H01L21/336;H01L21/768;H01L21/8242;H01L23/485;H01L23/522;H01L27/108;H01L29/417;H01L29/78 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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