发明名称 FORMATION OF COMPOSITE OXIDE SUPERCONDUCTING THIN FILM
摘要 PURPOSE:To allow the execution of a film forming process at a lower temp. by arranging an electrode between a substrate and a target and executing a laser vapor deposition treatment while impressing a bias voltage between this electrode and the target as another electrode. CONSTITUTION:The substrate 1, the target 3 and the electrode 5 formed with metallic meshes are placed in a vacuum chamber 6. The target 3 is irradiated via a condenser lens 8 with the laser beam generated by a laser generator 7. The electrode 5 is placed in the position enclosing the bloom generated from the target 3 toward the substrate 1. The cathode of a bias power source 5a is connected to the target 3 and the anode to the electrode 5. The superconduction critical temp. of the sample formed by the specific impressed voltage increases if the laser vapor deposition is executed by changing the impressed bias power voltage. The execution of the film forming process at the lower temp. is executed and the film having the excellent film characteristics and superconductive characteristics is formed.
申请公布号 JPH04365853(A) 申请公布日期 1992.12.17
申请号 JP19910167804 申请日期 1991.06.12
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NAGAISHI RYUKI;OTA YUKIHIRO;FUJIMORI NAOHARU
分类号 C23C14/08;C23C14/06;C23C14/24;C23C14/28;C30B29/22;H01B12/06;H01L39/24 主分类号 C23C14/08
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