| 摘要 |
PURPOSE:To provide a method of manufacturing a semiconductor device provided with a semiconductor substrate where crystal defects or oxide film defects are almost fully restrained from occurring on its surface on which a device is formed. CONSTITUTION:A semiconductor layer 12 different from a semiconductor substrate 11 in conductivity type and lower than it in oxygen concentration is uniformly formed on the semiconductor substrate 11, an inland-like well region 13 is formed in the semiconductor layer 12 so as to keep its base separate from the surface of the semiconductor substrate by a distance of 1-20mum and different from the layer 12 in conductivity type, and a MOS transistor and/or a capacitor are formed on the semiconductor layer or the well region as electrically insulated from the semiconductor substrate. |
