发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To increase the contrast of patterns down to the inside of film thickness. CONSTITUTION:At least one materials among materials, such as solvent, photosensitive agent and additives incorporated into the resist film applied on a substrate 1 to be worked are graded in concn. in the thickness direction of the resist film and thereafter, the resist film is exposed and developed, by which the spread quantity of the patterns anticipated from the latent image generated in the resist film by the exposing and the concn. gradient are offset and the highcontrast patterns are formed.
申请公布号 JPH04347862(A) 申请公布日期 1992.12.03
申请号 JP19910148117 申请日期 1991.05.24
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 ISHII TETSUYOSHI;NAKAMURA JIRO;MIYOSHI KAZUNARI
分类号 G03F7/26;G03F7/38;H01L21/027 主分类号 G03F7/26
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