发明名称 |
PRODUCTION OF ELECTROOPTICAL DEVICE |
摘要 |
<p>PURPOSE:To minimize the damages to films and to prevent the deterioration of the electrooptical device as well as to improve the mass productivity thereof by minimizing the flow of a high-frequency current to a substrate. CONSTITUTION:The thin films consisting of amorphous Si contg. substantially no hydrogen as a base are deposited on a substrate 12 by a double-surface passage type high-frequency sputtering device which insulates the substrate 12 from a vacuum chamber and sputtering electrodes and varies the phases of the high frequencies supplied to both-surface high-frequency sputtering electrodes by about 180 deg. from each other.</p> |
申请公布号 |
JPH04335323(A) |
申请公布日期 |
1992.11.24 |
申请号 |
JP19910106144 |
申请日期 |
1991.05.10 |
申请人 |
SEIKO INSTR INC;TOKUDA SEISAKUSHO LTD |
发明人 |
KURODA YOSHIKI;KURIYAMA NOBORU;IWAMI MUNENORI |
分类号 |
G02F1/136;G02F1/1365;H01L49/00 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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