发明名称 PRODUCTION OF ELECTROOPTICAL DEVICE
摘要 <p>PURPOSE:To minimize the damages to films and to prevent the deterioration of the electrooptical device as well as to improve the mass productivity thereof by minimizing the flow of a high-frequency current to a substrate. CONSTITUTION:The thin films consisting of amorphous Si contg. substantially no hydrogen as a base are deposited on a substrate 12 by a double-surface passage type high-frequency sputtering device which insulates the substrate 12 from a vacuum chamber and sputtering electrodes and varies the phases of the high frequencies supplied to both-surface high-frequency sputtering electrodes by about 180 deg. from each other.</p>
申请公布号 JPH04335323(A) 申请公布日期 1992.11.24
申请号 JP19910106144 申请日期 1991.05.10
申请人 SEIKO INSTR INC;TOKUDA SEISAKUSHO LTD 发明人 KURODA YOSHIKI;KURIYAMA NOBORU;IWAMI MUNENORI
分类号 G02F1/136;G02F1/1365;H01L49/00 主分类号 G02F1/136
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