| 摘要 |
A semiconductor memory device containing memory cells which store in a continuous manner an information item given by means of an overwrite, that is to say a regeneration operation capable of executing non-periodic regeneration operations. The semiconductor memory element comprises, internally, a regeneration request signal generator (100A) containing a reference memory cell (51) connected to a word line in the memory device (100). The regeneration request signal generator (100A) produces regeneration request signals only upon the erasure of the information item stored in the memory cell. The regeneration request signals output act such that regeneration signals are transferred to the memory cell. Thus, non-periodic regeneration operations can be executed, thereby lowering the current consumption and increasing the number of information input/output operations. <IMAGE>
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