MOSFET structure with gate oxide film - has gate on substrate of first conductivity type and ion implantation layer under gate

摘要

A gate oxide layer (14) and a gate (15) are formed on a substrate (11) of a first conductivity type in a MOSFET structure. Under the gate an ion implantation layer (19) is formed also of a first conductivity type in a channel region. On the side surfaces of the latter a source/drain zone (17, 18) is formed of low density and of a second conductivity type. Under both edge sections of the gate on the substrate, a source/drain zone (17a, 18) is formed of a high density and a second conductivity type. Pref. the ion implantation layer and the source/drain zone of low density are formed under facing insulation sections. ADVANTAGE - Can reduce hot carrier and doping compensation effects.