| 摘要 |
<p>Process for the treatment of an etched surface of a semiconducting or semiinsulating body. Also, integrated circuits obtained by such a process and an anodic oxidation apparatus for making use of such a process. The invention finds application in the field of the manufacture of integrated circuits with ultrafine detail (for dimensions smaller than a micron) and in particular for the production of electrooptical devices.
<??>The invention is characterised especially in that an anodic oxidation process controlled in respect of voltage and current is carried out and the oxide layer of controlled thickness is then partially stripped, in particular, so as to improve the resumption of epitaxy.
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