| 摘要 |
<p>PURPOSE:To maintain stable performance characteristic and high photoelectric conversion performance and to prevent emission of undesirable photoelectrons due to incident light from outside CONSTITUTION:A photoelectric conversion tube comprises a photoelectric surface consisting of a glass substrate 6 as a transparent substrate, a GaAs layer 3 formed on the glass substrate 6 and a CsAs layer 8 formed on this layer and a glass substrate 6, and includes a conductive silicon layer, optimally an amorphous silicon layer 7, in contact with the CsAs layer 8 and defining its periphery. The amorphous silicon layer 7 has a large absorption coefficient, so that light incident on the amorphous silicon layer 7 is absorbed there and there is thus no reflection at the GaAs layer. Therefore, undesirable emission of photoelectrons is prevented. The amorphous silicon layer 7 is in fine structure, so that it adheres intimately on a semiconductor electrode and the glass substrate 6; the vibrationproof property is thus good. The amorphous silicon layer 7 also prevents entry of minute substance into a semiconductor electrode.</p> |
