| 摘要 |
PURPOSE:To improve the substantial film-forming rate at the time of deposition of a non-single crystal silicon film while a process for depositing the silicon film and a process for applying hydrogen gas to the deposited silicon film are alternately repeated. CONSTITUTION:Infrared light to excite an interatomic bond is applied to a film deposited on a substrate 11. 10 is a chamber, 14 is a high-frequency power supply, 16 is a raw gas introducing port, 17 is a hydrogen gas introducing port and 18 is a microwave generation source. The infrared light to excite an interatomic bond is applied from an infrared light source 19 to the film through a window 22 in a hydrogen plasma irradiation process. As dissociation of an Si-H bond, an SiH2 bond and the like is promoted in a structural relaxation process, a hydrogen plasma irradiation time is shortened and the improvement of the substantial film-forming rate of the non-single crystal silicon film is made. |
