Divided drain horizontally constructed charge coupled device - has N-plus heat diffusion region with divided drain controlled by reset-gate spanning both drain sections

摘要

The device comprises alternating two-phase overlapping double gate structures (2, 5) overlaying an n+ float diffusion region (1) that divides into two sections as it passes under the overlying reset gate (2). The overlapping gate structures cover the float diffusion region to form a charge coupled device with buried canals (3), while the reset gate control line (RG) is connected to the second double gate so as to operate in conjunction with the applied switching signal. Both of the divided float diffusion areas are connected to the reset drain (RD), so that in operation, the reset gate connection to the second double gate control signal controls the flow of charge to the divided float diffusion areas. ADVANTAGE - Average noise value is lower across divided float diffusion area.