| 摘要 |
A method capable of measuring pattern shift of a semiconductor wafer in a short period of time with utmost ease and in an inexpensive manner is disclosed, wherein a main scale pattern and a vernier scale pattern are formed in parallel spaced confrontation on the semiconductor wafer, then one of the main scale pattern and the vernier scale pattern is covered with an oxide film layer, subsequently an epitaxial growing process is performed to form an epitaxial layer over the semiconductor wafer, and after that the dispalcement between the main scale pattern and the vernier scale pattern is measured.
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