| 摘要 |
PURPOSE:To prevent an electrode layer on the upper side from being overlapped with a stepped part at its lowr part, and a protruding part from being produced in the longitudinal direction and to improve the coverage of an interconnection by a method wherein, when an upper electrode layer and a lower electrode layer which sandwich an insulating film is aligned with each other in the transverse direction, the portion of the film thickness of at least the insulating film is added to an alignment margin. CONSTITUTION:A semiconductor device provided with a multilayer interconnection structure in which a plurality of electrode layers 2 to 5 and insulating films 6 to 10 have been arranged alternately is manufactured. At this time, the upper and lower electrode layers 3, 4 sandwiching the insulating film 7 are aligned with each other in the transverse direction. At this time, they are aligned by adding the portion of the film thickness (d) of at least the insulating film 7 to an alignment margin between the upper and lower electrodes. For example, at the multilayer interconnection structure of an SRAM, an insulating film 7 is formed of SiO2 on a second-layer polysilicon layer 3 in a film thickness of 100nm by a CVD method. At this time, when the alignment margin of a stepper is at 0.2mum, the alignment of a third-layer polysilicon layer 4 is performed at a margin alpha of 0.1+0.2=0.3mum. |
