| 摘要 |
PURPOSE:To further attain a higher of integration by further tapering the edge of a gate electrode for information transfer MISFET on the upper part or relaxing its edge angle. CONSTITUTION:An information transfer MISFETQ mainly vomprises a gate insulation film 5, a gate electrode 7, and a pair of n-type semiconductor regions 10. The gate insulation film 5 is installed to the main side of a p-type well region 2 while gate electrode 7 is installed to the gate insulation film 5. The upper side of the gate electrode 7 is relaxed in its edge angle. The offset formed on the surface of a side wall spacer 11 is relaxed than vertical by relaxing this edge angle.This construction makes it possible to enhance the current drive capacity of the information transfer MISFETQ and hence increase the degree of integration of a semiconductor integrated circuit device. |
