| 摘要 |
<p>A thinned backside illuminated charge-coupled imaging device has improved quantum efficiency by providing a sharp ion implant distribution profile (20) disposed at the rear surface (22) of the device. The sharp ion implant distribution profile (20) is formed using ion implantation at a beam energy potential of between 100-150 keV, which forms an electric field beneath the surface of the device. The ion distribution profile (20) is brought to the surface (22) of the device by removing silicon (18) from the rear surface (22), using a polishing technique wherein the device is lapped with colloidal silica abrasive to controllably remove silicon down to the level of the ion implantation profile (20). <IMAGE></p> |
