| 摘要 |
PURPOSE:To obtain a ferroelectric memory cell with relaxed internal stress of the ferroelectric body, improved magnet-keeping characteristic, and reduced generation of noise, etc., by surrounding a side surface of the ferroelectric body with resin. CONSTITUTION:A polyimide layer 10 is formed within a contact hole 20 and then a resist film 11 is formed selectively so that both sides of the polyimide layer 10 may be covered equally. After that, the polyimide layer 10 outside a region of the resist film 11 is eliminated by etching and a contact hole 21 is formed. Then, PZT is formed as a ferroelectric body on an entire surface of a silicon substrate 1 by the sputter method and a PZT film 12 is formed. Then, a Pt film layer 13 is formed on an entire surface of the PZT film 12 by the sputter method. Then, the resist film 11, the PZT film 12, and the Pt film 13 are simultaneously subjected to soft on and the PZT film 12 and the Pt film 13 are left only within the contact hole 21, thus enabling a side surface of the PZT film 12 and the Pt film 13 to be surrounded by the polyimide layer 10. |
