Wafer-bonded semiconductor sensor.

摘要

A wafer-bonded semiconductor sensor (42) includes a first semiconductor substrate (44) having a cavity (48) formed in a first surface (46) thereof and a second semiconductor substrate (54) bonded to the first surface (46) of the first substrate (44) so that the portion of the second substrate (54) disposed above the cavity (48) operates as a diaphragm (56). A specific embodiment of this invention employs an insulating layer (58) between the first (44) and second (54) substrates so that a silicon-on-insulator sensor is obtained. <IMAGE>