| 摘要 |
PURPOSE:To acquire a semiconductor laser of a small threshold current. CONSTITUTION:An N-type clad layer 2, a P-type clad layer 4 and an active layer 3 between the clad layers are provided on a substrate 1. At least one of the clad layers is formed by doping impurities 20 or 40 forming the clad layer with impurities 40 or 20 of opposite conductivity which are ionic-bonded with the impurities. Since the N-type impurities 20 and the P-type impurities 40 pull mutually, they are hard to move alone. Therefore, at a high temperature of crystal growth, diffusion into the active layer can be restrained and a semiconductor laser of a small threshold current can be acquired.
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