发明名称 |
Method of producing semiconductor substrate. |
摘要 |
<p>A method of producing a semiconductor substrate, which comprises forming a monocrystalline silicon layer on a porous silicon substrate by epitaxial growth and applying an oxidation treatment to the porous silicon substrate and the monocrystalline silicon layer at least near the interface between the porous silicon substrate and the monocrystalline silicon layer. <IMAGE></p> |
申请公布号 |
EP0501119(A2) |
申请公布日期 |
1992.09.02 |
申请号 |
EP19920100607 |
申请日期 |
1992.01.15 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAKAGUCHI, KIYOFUMI;YONEHARA, TAKAO |
分类号 |
H01L21/02;H01L21/20;H01L21/306;H01L21/762;H01L27/12;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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