发明名称 FARADAY EFFECT MATERIAL AND MAGNETIC FIELD SENSOR
摘要 <p>PURPOSE:To miniaturize the magnetic field sensor by using a specific Faraday effect material which exhibits a large Verdet's constant value. CONSTITUTION:The Faraday effect material essentially consisting of an HgS- MnS-ZnS alloy is prepd. Namely, ZnS is alloyed to an HgMnS alloy, by which the Faraday effect material having >=2.0min/Oe.cm Verdet's constant value is obtd. Then, the Verdet's constant tens to several tens times larger Verdet's constant than lead glass, BSO crystal, etc., which are the conventional Faraday effect materials is obtd. and, therefore, the magnetic field sensor formed by using this Faraday effect material can reduce the length of the Faraday rotating element to 1/10 to 1/several 10 the length of the conventional elements. The magnetic field sensor is, therefore, miniaturized and the magnetic field measurement is possible even in a narrow place.</p>
申请公布号 JPH04238320(A) 申请公布日期 1992.08.26
申请号 JP19910006433 申请日期 1991.01.23
申请人 SUMITOMO ELECTRIC IND LTD 发明人 KATSUTA MORIHIKO
分类号 G01R15/24;G01R33/032;G02F1/09;H01L43/00 主分类号 G01R15/24
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