发明名称 INTEGRATED CIRCUIT DEVICE CONTACT AND FORMATION METHOD THEREOF
摘要 PURPOSE: To reduce a minimum needed enclosure by filling an opening part which runs in an insulating layer with metal, and performing etching until a metal plug is formed in the opening part. CONSTITUTION: An aluminum layer and an aluminum/heat-resisting metal alloy layer 32 are etched. The etching is carried out until the insulating layer 24 is exposed, and consequently the heat-resisting metal layer 28 is also removed considerably. Consequently, a plug of a metal consisting of the thin heat-resisting metal layer 28, and aluminum/heat-resisting metal alloy layer, i.e., 1st metal and a 1st layer area 32 is left in the opening part 26. Then, a heat-resisting metal layer, i.e., a 2nd metal layer 34 is left on the surface of the device. Consequently, the contact of the integrated circuit device which eliminates the need to provide a width-expanded part to a signal line of metal for securing an enclosure and its formation are obtained.
申请公布号 JPH04229618(A) 申请公布日期 1992.08.19
申请号 JP19910095058 申请日期 1991.04.25
申请人 ESU JII ESU TOMUSON MAIKUROEREKUTORONIKUSU INC 发明人 FUU-TAI RIU;CHIYAARUZU RARUFU SUPINAA
分类号 H01L21/28;H01L21/285;H01L21/3205;H01L21/768;H01L23/485;H01L23/52;H01L23/522;H01L23/532 主分类号 H01L21/28
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