| 摘要 |
Installation (10) for processing of successive wafers (26) under pulsating double-floating condition within processing gaps (174) and (176) above and underneath such wafer of an at least almost entirely sealed-off processing chamber (24) by means of a reciprocating upper chamber wall (34) immediately above this wafer, and with wafer supply and discharge toward and from this chamber also under pulsating double-floating condition. |
